TNSC, a manufacturer of Metal Organic Chemical Vapor Deposition (MOCVD) System, announces that it has signed a Technical Agreement with ITRI in Taiwan, which is a leading R&D Institution with advanced opto-electronic technologies.

The objective of the Technical Agreement is to develop UVA LED on GaN substrate with TNSC AP (atmosphere pressure) MOCVD in order to demonstrate the potential of APMOCVD, which is a proprietary advanced technology of TAIYO NIPPON SANSO. ITRI acknowledges that TNSC APMOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low Indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN due to high quality.

Potentially, it is expected to develop a higher performance UVA LED on a native GaN substrate with a reasonable price than on conventional sapphire substrate, because TNSC can inject more current into LED on native GaN substrate due to low dislocation density and easy current spreading. Nearly ideal point light source will improve utilization efficiency of UV light by simple optics. Hopefully, the partnership between ITRI and TNSC will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.