Electro Ceramic & Device Group

Found year:1999 Technology Licensed from Panasonic Taiwan Headquarter (since 1968), Shanghai Factory (Since 2004)
Capability Highlights High Accuracy Multi-layer LTCC Substrate (X,Y tolerance +/- 0.05%; 10 times better than conventional shrinkage process +/-0.5%) Cu Slug Ceramic Substrate (> 300W/m'k Thermal Conductivity) Hermetic Ceramic Package (10^-8) Custom Thin/Thick Film Service Turnkey Assembling Packaging Service (GGI, C4, ACF, COB, SMT, Encapsulation & Dicing) Substrate/Material Option   Low Temp. Co-fired Ceramic (Glass Ceramic) Shrinkage Process (X,Y tolerance +/-0.5%) Non-Shrinkage Process (X,Y tolerance +/-0.05%) Technology transferred from since 1999 High Temp. Ceramic Al2O3 AlN   Metallization Thick Film Process with Various Metal Options (example: Ag, Cu, Al or Au) Thin Film Process with Various Metal Option(example: Ti/Cu, Cu or Al) Metal Roughness: 0.05um by Polishing or 0.3um by Lapping     Electrolytic & Electro-less Plating Electrolytic: Cu, Ni/Au Electroless: Ni/Pd/Au, Ni/Au