Lattice Power Joined force with ShineOn to Develop World's First HB LED Device

It’s said that Lattice Power Corp. has joined force with ShineOn Inc.to demonstrate the world's first high-brightness LED product based on GaN-on-Si technology.

Combining the LP1000 chip which is a thin-film vertical structure device built entirely on Lattice Power's proprietary GaN-on-Silicon technology and ShineOn's MOZ3535, a compact ceramic packaging platform with low thermal impedance and superior optical performance, the GaN-on-Si based high-brightness LED device can take 350–1000mA current input and deliver more than 100-lumen light output at 350mA, or more than 200 lumens when over-driven.

The new product aims at general lighting applications and suits for indoor lighting, incandescent replacement bulb, flashlight and even direct-lit LCD backlighting applications.

At present, it is in the sampling stage and volume orders will be available in the fourth quarter of this year.

Disclaimers of Warranties
1. The website does not warrant the following:
1.1 The services from the website meets your requirement;
1.2 The accuracy, completeness, or timeliness of the service;
1.3 The accuracy, reliability of conclusions drawn from using the service;
1.4 The accuracy, completeness, or timeliness, or security of any information that you download from the website
2. The services provided by the website is intended for your reference only. The website shall be not be responsible for investment decisions, damages, or other losses resulting from use of the website or the information contained therein<

Proprietary Rights
You may not reproduce, modify, create derivative works from, display, perform, publish, distribute, disseminate, broadcast or circulate to any third party, any materials contained on the services without the express prior written consent of the website or its legal owner.