Epistar and Azzurro have jointly made breakthroughs on developing GaN-on-silicon based LEDs utilising Epistar’s HB LED structures and Azzurro’s technology for 150mm GaN-on-silicon in just 4 months.

The firms transferred Epistar’s existing LED structures built on sapphire to the GaN-on-silicon material system, marking GaN-on-silicon one step further towards implementation in mass production.

GaN-on-silicon growth is often associated with many technological challenges. But the use of templates with unique strain‐engineering technology from Azzurro enables epitaxy engineers to quickly transfer their LED structures to GaN-on-silicon.

In addition, the patented and proprietary buffer stress management enables as little as 4nm wavelength homogeneity. This helps to reduce binning and increase the yield of LED epiwafers.