AIXTRON announced today that Elite Advanced Laser Corporation (eLASER), a Taiwan-based provider of electronics manufacturing services (EMS) for advanced optoelectronic and radio frequency (RF) components, has placed a repeat order for an AIX G5+ C system to produce gallium nitride (GaN) epitaxial wafers and devices for power electronics applications.

(Image: AIXTRON)

The production tool will be installed during the second half of 2017 to complement the customer’s existing capacity. It integrates the Penta-Injector technology for best material uniformities across the entire wafer diameter and is equipped with a Cassette-to-Cassette (C2C) Wafer Transfer Module for full automation of GaN processes.

“We have been impressed by the speed at which eLASER has transferred their device manufacturing processes on our system technology. Therefore, we are convinced that the recent addition of our AIX G5+ C platform which has become the tool of record at leading GaN power electronics manufacturers, will support the company’s goal to gain further market share in the GaN power electronics ecosystem. While offering configurations of 8x150 mm and 5x200 mm, the tool meets the toughest requirements from the silicon industry in terms of uniformity and particles. Thereby, AIXTRON’s G5+ C system technology is breaking down the barriers to bring GaN into silicon production lines”, says AIXTRON SE President Dr. Bernd Schulte.