IQE subsidiary NanoGaN has acquired two separate patents, patent 2008-549935 granted by the Japan Patent Office and patent No.2446471 granted by the UK patent office for its nanocolumn technology.

The title of patent 2008-549935 is: "growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials."This patent protects the Group's proprietary nanocolumn technology for producing high quality, free-standing gallium nitride substrates.

The title of patent No.2446471 is "production of semiconductor devices" .It aims to protect the manufacturing of semiconductor devices including laser diodes, LEDs and solar cells, directly onto the nanocolumn platform, thus expanding the number and type of substrates that can be used for epitaxy.