AIX G5 HT MOCVD System for LG Electronics GaN/Si Applications

LG Electronics Woomyeon R&D Campus (LG Electronics Advanced Research Institute),recently has ordered one Aixtron G5 HT MOCVD system in an 8x6-inch wafer configuration to develop GaN-on-Silicon power electronics.

In addition, the contract also includes a cooperation agreement in order to optimise LGE´s GaN/Si processes and to accelerate its proprietary device-oriented production.

The reactor was ordered in the first quarter of 2011 and following delivery in the third quarter of 2011 will be installed and commissioned by a local Aixtron service support team alongside the company’s already existing Aixtron MOCVD systems at a state-of-the-art facility in South Korea.

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