A team of researchers in Japan have developed a new technology for creating GaN LEDs on glass substrate, according to Japanese media source Nikkei Technology. 

Headed by Professor Hiroshi Fujioka from the Institute of Industrial Science at the University of Tokyo, the team’s development can not only cut manufacturing costs, but also help to actualize OLED light panels. 

The structure of the new LED formed on a glass substrate (left) and LED elements emitting red (R), green (G) and blue (B) lights (photo courtesy of Institute of Industrial Science, The University of Tokyo/ Nikkei Technology)

A sputtering method is used to transcribe the GaN LEDs onto the glass substrate. The team has not yet measures luminous efficiency or external quantum efficiency for any single color. They are currently testing the efficiency of the internal quantum at low temperatures, according to Nikkei. 

“The internal quantum efficiency is several tens of percent lower than that of an LED formed on a sapphire substrate,” said Fukioka. 

To read the abstract for the research team’s thesis published in Scientific Reports, please click here: Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering