X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers.

X-FAB Silicon Foundries will exhibit its high-performance power management solutions in 0.18 and 0.35 micrometer technologies at the Applied Power Electronics (APEC) 2014 Conference and Exposition in Fort Worth, Texas, next week. These solutions include its ultra-high-voltage CMOS process and a new analog cell library available in its XU035 process that helps engineers design monolithic AC/DC converters. APEC is the premier event in Applied Power Electronics™; it focuses on the practical and applied aspects of the power electronics business.