2016-01-19

Plessey, Anvil Semiconductors and University of Cambridge Aim to Overcome the Green Gap with GaN on 3C-SiC/Si LEDs

The collaboration, which is partly funded by Innovate UK under the £14m Energy Catalyst Programme, follows on from work by Anvil Semiconductors and the Cambridge Centre for GaN at the University of Cambridge where they successfully grew cubic GaN on 3C-SiC on silicon wafers by MOCVD. The underlying 3C-SiC layers were produced by Anvil using its patented stress relief IP that enables growth of device quality silicon carbide on 100mm diameter silicon wafers.  
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2015-04-21

University of Cambridge Selects Veeco MOCVD System for LED Development

Veeco Instruments announced today that the University of Cambridge, one of the most highly regarded research universities in the world, has ordered thePropel™ Power Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for GaN-on-silicon (Si) power electronics and light emitting diode (LED) research and development.
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(June 13) Macroblock participated in the annual event InfoComm 2025 held at the Orange County Convention Center in Florida, USA from June 11 to 13, 2025. Macroblock invited customers to visit the booth with the theme of "Meet with Macrobl... READ MORE

Whether in industrial manufacturing, medical technology or the automotive sector – lasers enable precise distance measurements, high-accuracy material processing, and also open up new possibilities in medical applications. From June 24 t... READ MORE