The collaboration, which is partly funded by Innovate UK under the £14m Energy Catalyst Programme, follows on from work by Anvil Semiconductors and the Cambridge Centre for GaN at the University of Cambridge where they successfully grew cubic GaN on 3C-SiC on silicon wafers by MOCVD. The underlying 3C-SiC layers were produced by Anvil using its patented stress relief IP that enables growth of device quality silicon carbide on 100mm diameter silicon wafers.  

Veeco Instruments announced today that the University of Cambridge, one of the most highly regarded research universities in the world, has ordered thePropel™ Power Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for GaN-on-silicon (Si) power electronics and light emitting diode (LED) research and development.