2015-12-17

Building Components for GaN Power Switches

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with applications spanning nearly all electronics products and electricity distribution infrastructures.
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The new IR:6 thin-film infrared LED chip technology is available in 850nm, 940nm and new 920nm wavelength options First IR:6-based products are the OSLON® P1616 and OSLON® Black series, giving customers a drop-in replacement that o... READ MORE
Display devices have been used for many years as a means of HMI (Human Machine Interface) to connect humans and machines interactively, and their usage are still expanding. Automotive interiors are no exception to this trend, with an increasing ... READ MORE