As fears of weakening demand for equipment such as LCD screens that use the LED bulbs, Cree closed down 8.1% to $50.18, Veeco fell 8.3% to $33.44 and Aixtron AG was 5.3% lower at $24.78. Cree and Veeco share prices are unchanged while Aixtron is down to $24.72 in recent late trading.

AIXTRON AG announced an order for three mass production MOCVD systems for GaN HB-LED production from the INCOTEX Group, a new AIXTRON customer in Bulgaria. INCOTEX placed the order in the first quarter of 2010 and the systems will be delivered from the third quarter of 2010 onwards. The local AIXTRON Europe support team will commission the new reactors at the company’s purposebuilt facility in Bulgaria.

AIXTRON AG today signed a contract with Sanan Optoelectronics Co. Ltd., on the supply of a double digit number of multiple CRIUS® II and AIX G5 MOCVD systems. The AIXTRON new generation MOCVD systems will be delivered between the fourth quarter of 2010 and the first quarter of 2011 and installed at Sanan’s new manufacturing facilities in Wuhu, Anhui, China. Earlier this year Sanan had announced their plans to invest into China’s largest LED manufacturing and research centre capable of operating up to 200 MOCVD systems.

AIXTRON AG today announced a new order for one Close Coupled Showerhead® GaN based LED MOCVD system from Meijo University, in Nagoya, an established AIXTRON customer in Japan. The order was received earlier this year and the system will be delivered in the fourth quarter of 2010 in a 3x2-inch wafer configuration.The local AIXTRON support team will commission the new reactor at Meijo University.

AIXTRON AG today announced the move of its South Taiwan Office into its new facilities in Tainan Tree Valley, next to the Tainan Science Based Industrial Park.

AIXTRON AG announced today a new order for six CRIUS II 55x2-inch configuration deposition systems from Hangzhou Silan Microelectronics Co., Ltd., ‘SILAN’. The Hangzhou, PR China based company, placed the order in the second quarter of 2010 and will take delivery of the systems over the fourth quarter 2010 to first quarter 2011 period. The systems will be used for the volume production of GaN ultra-high brightness (UHB) blue/green LEDs.

AIXTRON AG today announced shipment of its next generation QXP 8300 ALD product to a leading Korean DRAM manufacturer. The tool will be fully operational at the customer site by the end of Q2 2010.

AIXTRON AG announced today a new order from an existing customer in China. The order is for two CRIUS production deposition systems in a 31x2 inch configuration. LED manufacturer Xi An ZoomView placed the order in the fourth quarter of 2009, and will use both reactors for GaN HB-LED production. The systems will be delivered over the second to third quarter period of 2010 with the local AIXTRON support team installing and commissioning the new reactors at the company’s new production facility.

AIXTRON AG today announced an order from its long-time customer, Fraunhofer Institute for Applied Solid State Physics (IAF) located in Freiburg, Germany. IAF has ordered one AIX 2800G4 HT, 11x4 inch MOCVD tool which it will be using for GaN on SiC for high power, high frequency applications to enable commercialization of GaN devices in the near future. The IAF placed its order in the fourth quarter of 2009 and AIXTRON’s support team will install and commission the new reactor at their laboratory in the third quarter of 2010.

AIXTRON AG today announced that Tekcore Co. Ltd of Taiwan has placed a multiple order for AIXTRON’s latest MOCVD System, the AIX G5 HT, to expand their manufacturing capacity of high brightness light emitting diodes (HB-LEDs).

AIXTRON AG announced an order for one Black Magic CNT (carbon nanotube) deposition system from the Eidgenössische Materialprüfungs- und Forschungsanstalt (EMPA), Switzerland. The order was received in the third quarter 2009 and the system will be delivered in the first quarter 2010 with the 1x2 inch wafer configuration.

AIXTRON AG announced a multiple system order for several CRIUS® (31x2 inch configuration) and AIX 2800G4HT MOCVD production systems (42x2inch configuration) from Lattice Power, an existing customer in Nanchang, Jiangxi Province, China. This is one of the largest single orders from China AIXTRON had received. Lattice Power placed its order in the fourth quarter of 2009 for the growth of high-power InGaN on silicon LEDs.

AIXTRON AG announced the receipt of a purchase order for a 6” Black Magic Plasma Enhanced CVD (PECVD) system for graphene and carbon nanotube (CNT) growth from the University of California, Santa Barbara (UCSB), USA. This combined thermal CVD and plasma enhanced CVD tool is planned to be delivered in first quarter 2010 to Professor Kaustav Banerjee, who directs the Nanoelectronics Research Lab at UCSB.

AIXTRON AG announced that in the third quarter of 2009 Formosa Epitaxy Inc. ‘FOREPI’, based in Lung-Tan, Taoyuan, Taiwan, placed an order for multiple MOCVD reactors which will be used for the production of ultra-high brightness (UHB) InGaN-based blue LEDs.

AIXTRON AG yesterday announced that it has recently received a further multiple system order from Epistar located at the Hsinchu Science-based Industrial Park, Taiwan. The order, to be delivered during 2009, was received in Q2 and will commence delivery in Q3 of 2009. This recent order comprises of CRIUS® Close Coupled Showerhead® (CCS) reactors and AIX 2800G4 HT Planetary Reactor® systems for volume production of GaN-based LEDs.

AIXTRON AG, a leading provider of deposition equipment to the semiconductor industry, is pleased to announce an order for a MOCVD system from Showa Denko K.K., a Japan based leading manufacturer of Ultra-High-Brightness (UHB) LEDs received in the first quarter 2008.

Recently, AIXTRON AG announced a multiple order from Century Epitech Corp, located in Shenzhen, China, one of China's leading players in the high brightness LED sector.