Cree announced that it will team up with ABB to jointly expand the rollout of silicon carbide in the rapidly-growing high-power semiconductor market. The agreement incorporates the use of Cree’s Wolfspeed® silicon carbide-based semiconductors into ABB’s comprehensive product portfolio, enabling Cree to broaden its customer base while accelerating ABB’s entry into the fast-expanding EV sector. (Image: Cree) Cree’s products will be included as part of ABB’s power semiconductor product portfolio, across power grids, train and tractio...

Delphi Technologies, an automotive propulsion technologies provider, and Cree will collaborate to utilize silicon carbide semiconductor device technology to enable faster, smaller, lighter and more powerful electronic systems for future electric vehicles (EV). Cree’s silicon carbide-based MOSFET (metal–oxide–semiconductor field-effect transistor) technology coupled with Delphi Technologies’ traction drive inverters, DC/DC converters and chargers will extend driving range and deliver faster charging times of EVs, while also lowering weight, con...

Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing additional module platforms and topologies for the 1200 V CoolSiC™ MOSFET family. Infineon is now able to bring the potential of SiC technology to a new level.

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, extends its leadership in SiC power device technology with the release of the industry’s first power module that passes the harsh environment qualification test for simultaneous high-humidity, high-temperature and high-voltage conditions.