Germany-based IP licensing company ALLOS Semiconductors sees itself as the leading provider of GaN-on-Si wafer technology for LED, power and RF applications and claims to have the best performance in the market with respect to essential properties like crystal quality, uniformity, and low wafer bow.

As time is moving forward to the second quarter of 2018, more and more rumblings and updates about Micro/Mini LED emerged and have been circulating in the industry. In February, LEDinside collected and revealed information of Micro LED development from nearly 50 companies around the globe. Here, we would like to share some progress updates released after that from 10 companies.

ALLOS Semiconductors won this year’s prestigious Compound Semiconductor Industry Substrates and Materials Award for showing breakdown voltages of > 1400 V on GaN-on-Si power semiconductor epiwafers.