2019-03-11

Vertically Integrated GaN LEDs Proposed to Advance Micro LED Display

Researchers at Rochester Institute of Technology in the U.S. proposed a new designed vertical integration of GaN LED which enables improved efficiency of Micro LED displays. Matthew Hartensveld and Jing Zhang from Rochester Institute of Technology published a new study on IEEE Electron Device Letter describing how they managed to vertically integrated nanowire GaN field-effect transistors (FETs) and InGaN LEDs. The novel structure places the transistor below the LED which for controlling and dimming. (Image: Hartensveld and Zhang) Comb...
Continue reading

Signify, the world leader in lighting, has been awarded the Platinum sustainability rating from EcoVadis, underscoring its consistent leadership in sustainability. The ranking places Signify among the top 1% of companies evaluated worldwide. W... READ MORE

Aledia, the leader in nanowire and 3D silicon-based microLED display technology, is proud to announce it is a winner in the Computing, Chips, and Foundational Technology category in Fast Company’s Next Big Things in Tech list. This prest... READ MORE