2019-03-11

Vertically Integrated GaN LEDs Proposed to Advance Micro LED Display

Researchers at Rochester Institute of Technology in the U.S. proposed a new designed vertical integration of GaN LED which enables improved efficiency of Micro LED displays. Matthew Hartensveld and Jing Zhang from Rochester Institute of Technology published a new study on IEEE Electron Device Letter describing how they managed to vertically integrated nanowire GaN field-effect transistors (FETs) and InGaN LEDs. The novel structure places the transistor below the LED which for controlling and dimming. (Image: Hartensveld and Zhang) Comb...
Continue reading

Orchestrating displays for a business is no small feat. Displays are important as they play a key role in setting the tone and coordinating interaction in a physical space. However, each business have unique needs and it can get mind-boggling ... READ MORE

Ennostar Inc., a global leader in optoelectronic semiconductors, is partnering with X-Celeprint Ltd, the European pioneer in Micro-Transfer Printing (MTP) technology, to accelerate the adoption and commercialization of mass transfer technology... READ MORE