Researchers at Rochester Institute of Technology in the U.S. proposed a new designed vertical integration of GaN LED which enables improved efficiency of Micro LED displays. Matthew Hartensveld and Jing Zhang from Rochester Institute of Technology published a new study on IEEE Electron Device Letter describing how they managed to vertically integrated nanowire GaN field-effect transistors (FETs) and InGaN LEDs. The novel structure places the transistor below the LED which for controlling and dimming. (Image: Hartensveld and Zhang) Comb...