2019-03-11

Vertically Integrated GaN LEDs Proposed to Advance Micro LED Display

Researchers at Rochester Institute of Technology in the U.S. proposed a new designed vertical integration of GaN LED which enables improved efficiency of Micro LED displays. Matthew Hartensveld and Jing Zhang from Rochester Institute of Technology published a new study on IEEE Electron Device Letter describing how they managed to vertically integrated nanowire GaN field-effect transistors (FETs) and InGaN LEDs. The novel structure places the transistor below the LED which for controlling and dimming. (Image: Hartensveld and Zhang) Comb...
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Strawberries flourish in a Controlled-Environment Agriculture Installation with Horticulture LED lighting provided by Cree LED and RED Horticulture. (Photo courtesy of RED Horticulture) The integration of technology into every aspect of life i... READ MORE

The prior blog titled “Nichia’s contribution to a realization of a mercury-free society” took a short break. However, there was a release about new LED-based water disinfection devices made by Miura Co., Ltd., a Japanese manu... READ MORE