iBeam Materials announced that it has successfully demonstrated the ability to make high-performance GaN Field-Effect Transistors (FETs) directly on thin, flexible and rollable metal foil substrates. These transistors can be produced without the need for a transfer step and can be integrated side-by-side with Micro LED emitters previously demonstrated by iBeam for use in a display. iBeam expects to see the technology available for large-scale manufacturing by 2022. The advent of paper-thin, ultra-flexible Micro LED displays using iBeam technology eliminates the trad...