2020-07-21

ALLOS Partners KAUST Research Team to Develop High Efficiency InGaN Red Micro LED on Silicon

ALLOS Semiconductors announced its collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates. The collaboration will focus on solving fundamental issues like the large lattice mismatch and the quantum-confined Stark effect (QCSE) which limit the adoption of red nitride-based LEDs for practical industry usage. In particular, for the emerging field of Micro LED displays there is a strong demand to enable red LEDs on ...
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Nichia, the world's largest LED/Laser Diode manufacturer and inventor of high-brightness blue and white LEDs, is pleased to announce that it is currently advancing the joint development of an intravascular laser irradiation system with Ill... READ MORE

ams OSRAM, a global leader in innovative light and sensor solutions, will showcase how its latest solutions are powering game-changing applications in nearly every industry at CES 2026 in an invite-only meeting room at the Venetian Expo. Top e... READ MORE