Porosification of InGaN provides a foundation for brighter red microLEDs Researchers at the University of California, Santa Barbara (UCSB), claim to have provided the first demonstration of InGaN-based red microLEDs with dimensions below 10 μm. Their work includes a measurement of the on-wafer external quantum efficiency (EQE) - a value of 0.2 percent. The team's miniaturised microLED will help the development of displays based on these devices and green and blue cousins. Screens formed from a vast number of tiny LEDs promise to deliver greater...