2022-09-08

GaNo Opto Launches SiC Extreme UV Photodiode

GaNo Optoelectronics Inc, China - which offers UV detectors and modules based on wide-bandgap semiconductors including GaN and SiC - has released what it claims are the first commercial SiC-based extreme UV (EUV) photodiode. Extreme UV is defined as having wavelengths from 124 nm down to 10 nm. The intrinsically visible-blind EUV photodiodes can work in either photovoltaic or photoductive mode with high EUV photon detection efficiency, high response speed and high stability. After pilot production and multiple customer verifications started from Oct. 2021, G...
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The CLEDIA project, co-financed by the Auvergne-Rhône-Alpes A group of logos with different names AI-generated content may be incorrect. Region and Bpifrance has just been completed after three years of collaborative innovation between P... READ MORE

Seoul Semiconductor has developed an innovative LED light source—SunLike—that reproduces a spectrum nearly identical to natural sunlight. The technology is gaining attention for its positive effects on eye health, including reducing ... READ MORE