GaNo Optoelectronics Inc, China - which offers UV detectors and modules based on wide-bandgap semiconductors including GaN and SiC - has released what it claims are the first commercial SiC-based extreme UV (EUV) photodiode. Extreme UV is defined as having wavelengths from 124 nm down to 10 nm. The intrinsically visible-blind EUV photodiodes can work in either photovoltaic or photoductive mode with high EUV photon detection efficiency, high response speed and high stability. After pilot production and multiple customer verifications started from Oct. 2021, G...