https://data.angel.digital/pdf/Compound_Semiconductor_Issue_7_2023.pdf MBE for far-UV LEDs 150 mm sapphire substrates are a promising platform for high-volume production of far-UVC LEDs via MBE WHILE MOCVD is the most common growth method for producing far-UV LEDs, MBE also enables high-volume, high-yield production of these devices, says Silanna UV. This Australian outfit has made more than 10,000 functional devices from a 150 mm GaN-based epiwafer, produced on a sapphire substrate using a Veeco GEN200 MBE tool. Following pac...

High-performance, hermetically sealed packages ideal for sensing applications Silanna UV is pleased to announce the release of two new products in its SF1 235nm and SN3 255nm series of UV-C LEDs: the SF1-3T9B5L1 and the SN3-5T9B5L1. Silanna UV's new UV-C LEDs feature the Transistor Outline (TO-can) package format, which consists of a header and a cap that together form a hermetically sealed package. This innovative design protects sensitive semiconductor components within the package. The header supplies power to the encapsulated components, wh...