2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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The transition from halogen to LED technology is becoming even easier: ams OSRAM expands its portfolio of ECE-approved LED retrofit lamps with the NIGHT BREAKER LED SPEED ECE H8, HB4 and H16. The new lamps expand the options for retrofitting t... READ MORE

Vehicle interiors are changing fundamentally. Displays are becoming larger, surfaces smarter, and light is evolving from a design element into an intuitive communication surface. With the new ALIYOS™ Bond Vision demonstrator, ams OSRAM i... READ MORE