2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
Continue reading

Whether in city traffic, on country roads, or off-road, bicycle lights from ams OSRAM (SIX: AMS) reliably ensure visibility and safety. Just in time for the dark season, the new generation of powerful bicycle lighting is here: the innovative L... READ MORE

The way we interact with digital worlds is evolving rapidly, driven by the pursuit of ever more immersive, secure, and sustainable experiences. The latest advances in miniaturization, efficiency, and seamless integration with AR/VR solutions a... READ MORE