2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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Signify, the world leader in lighting, announces that Kwekerij Bolleboom in Bleiswijk and Kwekerij Bazuin in Pijnacker in the Netherlands are investing in Philips GreenPower LED toplighting force elite and Philips GrowWise control for their cu... READ MORE

Cree LED®, a Penguin Solutions brand (Nasdaq: PENG), and Promier Products, Inc. today announced that they have reached a mutually beneficial settlement resolving a patent infringement dispute involving Cree LED’s patents related to L... READ MORE