2012-09-05

Cree Offers 4H Silicon Carbide Epitaxial Wafers Featuring Very Low Basal Plane Dislocation

Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers.  This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as < 0.1 cm-2.   This low BPD material further demonstrates Cree’s long-standing commitment to continuous improvement and investment in SiC materials technology. “Bipolar devices in SiC have long been held back by forward voltage degradation caused by the pres...
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2012-08-31

Cree Debuts 150-mm 4HN Silicon Carbide Epitaxial Wafers

Cree announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers. Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase. SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication ...
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Violumas, provider of high-power UV LED solutions and inventor of 3-PAD LED technology, is proud to launch the release of new 275nm and 265nm LEDs in mid-power, high-power, and high-density packages. The radiant flux of the new 275nm and 265nm... READ MORE

DURHAM, NC – November 12, 2024 –– Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced the launch of its new CV28D LEDs with FusionBeam™ Technology, a groundbreaking advancement for the LED signage market... READ MORE