2012-09-05

Cree Offers 4H Silicon Carbide Epitaxial Wafers Featuring Very Low Basal Plane Dislocation

Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers.  This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as < 0.1 cm-2.   This low BPD material further demonstrates Cree’s long-standing commitment to continuous improvement and investment in SiC materials technology. “Bipolar devices in SiC have long been held back by forward voltage degradation caused by the pres...
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2012-08-31

Cree Debuts 150-mm 4HN Silicon Carbide Epitaxial Wafers

Cree announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers. Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase. SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication ...
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XLamp® CTW LEDs bring lighting flexibility to life New XLamp® CTW Series – Two-Channel CCT-Tunable White COB LEDs Cree LED’s XLamp CTW Series redefines CCT-tunable COB LEDs with unmatched lumen density, efficiency and de... READ MORE
ams OSRAM, a global leader in innovative light and sensor solutions today held a roundtable forum spotlighting new opportunities with high precision illumination characterization. The event brought together experts from industry, academia, and... READ MORE