2012-11-02

Japanese NGK Insulators Develops GaN Wafers to Double Green LED Luminous Efficiency

NGK Insulators, Ltd. of Japan has announced the development of high-quality GaN wafers to reduce defects and roughly double the luminous efficiency of green LEDs over previous models. NGK achieved this breakthrough by using a crystal growth technology that it has improved through a proprietary approach. The GaN wafers developed by NGK feature low defect density across the entire 2-inch diameter of the wafer surface and have a colorless transparency. NGK achieved this through proprietary improvements to liquid phase epitaxial technology for single crystal growth. ...
Continue reading

Signify, the world leader in lighting, has partnered with Mercedes-AMG to help set a new world record for electric vehicle performance. The CONCEPT AMG GT XX secured a new world record for electric distance driving by driving 40,075 km in 7 da... READ MORE

Battling germs with UV-C radiation: disinfection with light is gaining global importance — in hospitals, offices, kitchens, and bathrooms. Even tap water can be disinfected using UV-C radiation. ams OSRAM has now achieved a technological... READ MORE