2013-09-03

Azzurro Demonstrates “1 Bin” Wavelength GaN-on-Si LED Wafer

German semiconductor manufacturer, Azzurro LED Technologies, announced during a talk at ICNS-10 that the company’s technology has reached the capability of achieving “1 bin” GaN-on-Si LED wafers. While showing production values of less than 3 nm wavelength uniformity, the 1.0 nm result came straight from development. The record 1.0 nm result demonstrates the capability to achieving “1 bin” GaN-on-Si LED wafers.
Continue reading

ams OSRAM, a global leader in innovative light and sensor solutions today announced at Laser World of Photonics China (LWPC) 2026 a portfolio of laser products powered by its latest blue multi-mode laser chips. The company also presented, for ... READ MORE

The introduction of the new Audi Q3 marks significant technological progress in how digital lighting systems are integrated into the Audi compact segment. EVIYOS HD25 is an advanced, pixel-based lighting solution developed by ams OSRAM. It is ... READ MORE