German semiconductor manufacturer, Azzurro LED Technologies, announced during a talk at ICNS-10 that the company’s technology has reached the capability of achieving “1 bin” GaN-on-Si LED wafers. While showing production values of less than 3 nm wavelength uniformity, the 1.0 nm result came straight from development. The record 1.0 nm result demonstrates the capability to achieving “1 bin” GaN-on-Si LED wafers.