2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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Violumas, provider of high-power UV LED solutions and inventor of 3-PAD LED technology, is proud to launch the release of new 275nm and 265nm LEDs in mid-power, high-power, and high-density packages. The radiant flux of the new 275nm and 265nm... READ MORE

DURHAM, NC – November 12, 2024 –– Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced the launch of its new CV28D LEDs with FusionBeam™ Technology, a groundbreaking advancement for the LED signage market... READ MORE