2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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Signify, the world leader in lighting, announces that Kwekerij Bolleboom in Bleiswijk and Kwekerij Bazuin in Pijnacker in the Netherlands are investing in Philips GreenPower LED toplighting force elite and Philips GrowWise control for their cu... READ MORE

Cree LED®, a Penguin Solutions brand (Nasdaq: PENG), and Promier Products, Inc. today announced that they have reached a mutually beneficial settlement resolving a patent infringement dispute involving Cree LED’s patents related to L... READ MORE