2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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Aledia, the leader in nanowire and 3D silicon-based microLED display technology, is proud to announce it is a winner in the Computing, Chips, and Foundational Technology category in Fast Company’s Next Big Things in Tech list. This prest... READ MORE

Wearables are evolving into everyday health companions. To reliably capture vital signs such as blood oxygen saturation (SpO₂) with in-ear or other compact wearable devices, optical components are required that take minimal space while deliver... READ MORE