2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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Seoul Semiconductor has developed an innovative LED light source—SunLike—that reproduces a spectrum nearly identical to natural sunlight. The technology is gaining attention for its positive effects on eye health, including reducing ... READ MORE

Pro9™ technology uses Potassium Fluoride Silicon (KSF or PFS) phosphor to boost the efficiency of LED components, especially those delivering higher CRI. Cree LED’s Pro9 LEDs are covered under a technology license from Current Ligh... READ MORE