2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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Civic engagement combined with an innovative solar lighting concept from LEDVANCE has made the Nelson Mandela Bridge – one of South Africa’s most important landmarks – safe and visible once again. In just three weeks, LEDVANCE, ... READ MORE
Premstaetten, Austria, and Munich, Germany (September 18, 2025) In automotive electronics, reliability is a key design criterion. Capacitive sensors are widely used in exterior and interior vehicle applications—from touch-based door hand... READ MORE