2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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Silanna UV, a global innovator in ultraviolet semiconductor technology, today announced the release of an additional package type: a TO-39 flat window package for its high-performance SF1 series (Far-UVC 235 nm) and SN3 series (Deep-UVC 255 nm) L... READ MORE

Ennostar, a leading vertically integrated optoelectronic semiconductor company, will showcase its latest Micro LED optical communication innovations at Touch Taiwan 2026, in collaboration with AUO Corporation and Tyntek Corporation. In additio... READ MORE