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2013-10-29

Toshiba Launches Next Generation GaN-on-Si White LEDs

Toshiba Electronics Europe (TEE) has announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on cilicon (GaN-on-Si) process. The 1W TL1F2 LEDs offer a cost-competitive alternative to current LED packages, allowing manufacturers of general purpose and industrial LED lighting to drive down costs.
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Ultra-low-power innovations, enhanced precision, and extended versatility: ams OSRAM unveils the TMF8806 direct Time-of-Flight (dToF) sensor module

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Cree LED Delivers 20% Efficiency Increase for XLamp XE-G LEDs

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