Cree, Inc. plans to demonstrate a variety of new GaN HEMT RF packaged amplifier and switch products at the IEEE MTT-S International Microwave Symposium (Booth #836) to be held in the Anaheim Convention Center May 25 through May 27, 2010.

The products to be demonstrated include a SPDT MMIC switch (300 MHz to 3 GHz); a 25 W MMIC power amplifier (10 MHz to 6 GHz); a 75 W MMIC power amplifier (2.7 to 3.5 GHz); and a 240 W transistor (2.9 to 3.5 GHz).

Jim Milligan, Cree, director of RF & Microwave Products, noted that these product demonstrations are designed to show the benefits of Cree GaN to hardware design engineers seeking ways to improve system level output power, bandwidth and dynamic range beyond what can be achieved with traditional GaAs or silicon LDMOS solutions. They will also have access to the product development engineers to answer questions regarding specific implementation and advantages of these next generation products.

GaN Packaged Product Demonstrations at MTT-S:

SPDT MMIC Switch (0.3 to 3 GHz): Cree's CMSA30025S is the first GaN MMIC SPDT switch to operate over the 300 MHz to 3 GHz range with less than 0.7 dB insertion loss, 30 dB isolation and less than 20 nec switching speed. The RF power handling capability of this switch is 25 watts CW at only 0.1 dB compression with an output intercept point higher than 60dBm. The demonstration will show the QFN version of the switch in a test fixture with driver under "hot switching" conditions. Engineers will be able to observe its small size, low power consumption and its ability to be incorporated into a circuit with few additional components, unlike conventional PIN diode switches.

25 Watt MMIC PA (10 MHz to 6 GHz): Cree's CMPA0060025F is a packaged GaN MMIC power amplifier operating from below 10 MHz up to 6 GHz with typical saturated output power of greater than 25 watts CW and power gain of 12 dB. This distributed amplifier has typical drain efficiencies of 40% and is packaged within a 0.5 inch square footprint. The amplifier will be demonstrated in an evaluation fixture that is available for customer measurements.

75 Watt MMIC PA (2.7 to 3.5 GHz): Cree's CMPA2735075F is the first of a family of radar-centric packaged MMIC power amplifiers. Demonstrated in its evaluation fixture, this amplifier provides 75 watts of pulsed RF power (pulse widths of 300 microseconds typical at 10% duty cycle) with an accompanying power gain of 20 dB over the 2.7 to 3.5 GHz frequency range. This 50 ohm (in/out) matched MMIC typically provides 55% power added efficiency (PAE). The device is housed in a small, 0.5 inch square package and exhibits superior amplitude and phase droop characteristics.

240 Watt Transistor (2.9 to 3.5 GHz): Moving up in power level, Cree's CGH35240F is a fully internally matched, 50 ohm power transistor employing Cree's GaN on SiC technology for excellent thermal management and reliability. The packaged transistor, measuring 0.70 by 0.95 inches, provides a saturated output power of greater than 220 watts with accompanying power gain of greater than 11 dB over the 2.9 to 3.5 GHz frequency range with typical PAE of 60%. This device will be demonstrated in an evaluation fixture that is available for customer measurements in typical radar applications.