Bridgelux Makes Breakthroughs on GaN-on-Silicon Based LED Technology

Bridgelux has made a breakthrough on the 135 Lumens per Watt GaN-on-Silicon based LED Technology, which marks the industry's first commercial grade performance for a Silicon-based LED.

The 135 Lumen per Watt performance was achieved at a CCT of 4730K using a single 1.5mm power LED operated at 350mA. These LEDs operate just 2.90V at 350mA and < 3.25V at 1 Amp. Optimization of the epitaxy process on 8-inch Si wafers will make LED manufacturing compatible with existing automated semiconductor lines.

It’s said that the company will leverage its strong R&D and Intellectual Property position in LED epitaxy to jointly manufacture silicon based LEDs.

Currently, it is in discussions with a number of established semiconductor companies regarding the utilization of the many fully depreciated 8-inch semiconductor fabrication operations available all over the world.

Disclaimers of Warranties
1. The website does not warrant the following:
1.1 The services from the website meets your requirement;
1.2 The accuracy, completeness, or timeliness of the service;
1.3 The accuracy, reliability of conclusions drawn from using the service;
1.4 The accuracy, completeness, or timeliness, or security of any information that you download from the website
2. The services provided by the website is intended for your reference only. The website shall be not be responsible for investment decisions, damages, or other losses resulting from use of the website or the information contained therein<

Proprietary Rights
You may not reproduce, modify, create derivative works from, display, perform, publish, distribute, disseminate, broadcast or circulate to any third party, any materials contained on the services without the express prior written consent of the website or its legal owner.