Lattice Power has started mass production of its new generation GaN-based high powered LEDs on silicon substrates, which sets the backdrop for a sharp reduction in the prices of energy-efficient LED light bulbs worldwide.

Lattice Power claims to be the first and only company in volume production of GaN-on-Silicon LED chips, with products that are comparable to high-end chips that rely on conventional sapphire substrates.

Operating at a current of 350mA, the 45 mm product is capable of producing 130 lumen cool white with an efficiency of 120 lumens for each watt consumed. What's more, silicon substrates are readily available in larger diameters and come at a fraction of the cost of sapphire substrates resulting in substantial cost reductions for downstream manufacturers.

Twenty strategic customers have received the LEDs and will incorporate them into indoor and outdoor lighting applications. Lattice Power's silicon substrate-based LED series encompasses four different chip sizes: 28mm x 28mm, 35mm x 35mm, 45mm x 45mm, and 55mm x 55mm. Chip power ranges from 0.5W to 2W.

According to some experts’ prediction, future LED chip cost savings could be as much as 70% greater than with the current mainstream products when manufactured on larger diameter silicon substrates. And currently, Lattice Power is actively working on 150mm GaN-on-silicon technology and is expecting to transfer its production to even larger diameter silicon substrates in 2013.