STMicroelectronics announced the collaboration with TSMC to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market. Through this partnership, ST’s GaN products will be manufactured using TSMC’s GaN process technology.

GaN is a wide bandgap semiconductor material which is considered outpacing traditional Silicon-based semiconductors for power applications. GaN is more energy efficient at high power and allows the design of more compact devices for better form factors. Additionally, GaN-based devices switch much faster than Silicon-based devices while operating at higher peak temperatures. With these features, GaN is regarded to be a solution suitable for broad-based adoption in automotive, Micro LED and more.

Specifically, Power GaN and GaN IC technology-based products will enable ST to provide solutions for medium and high-power applications with better efficiency compared to silicon technologies on the same topologies, including automotive converters and chargers for hybrid and electric vehicles. Power GaN and GaN IC technologies will help accelerate the megatrend of the electrification of consumer and commercial vehicles.

According to ST, the first samples of power GaN discrete devices are expected to be delivered later in 2020, followed by GaN IC products within a few months.