IQE Reaches Key Milestones With IQDN-VCSEL™ Technology For Long Wavelength VCSELs On 150 mm GaAs Substrates

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IQE reaches key milestones with IQDN-VCSEL™ technology for long wavelength VCSELs on 150 mm GaAs substrates
  • IQE has achieved key power and reliability milestones for its IQDN-VCSEL™ technology for advanced sensing applications at longer wavelengths on 150 mm GaAs substrates
  • IQE's customers benefit as they can use the same equipment and processes that were developed for shorter wavelengths to achieve longer wavelengths
  • IQE is currently engaged in customer-funded development programmes with key Tier 1 customers to optimise this technology for qualification in future 3D sensing applications

     
IQE plc (AIM: IQE, "IQE" or the "Group"), the leading manufacturer of advanced semiconductor wafer products for the global semiconductor industry, is pleased to announce it has achieved key power and reliability milestones for its IQDN-VCSEL™ technology for advanced sensing applications at longer wavelengths (1100-1600 nm) on 150 mm GaAs substrates. IQE is currently supplying wafers to Tier 1 partners and collaborating with them to refine this technology for next generation advanced sensing applications.
 
Currently, the longest achievable wavelength for GaAs-based Vertical Cavity Surface Emitting Laser (VCSEL) technology is limited to wavelengths of ~1100 nm. It is desirable to increase this wavelength to >= 1380 nm, thereby allowing this technology to be applied to below screen (BOLED) consumer applications such as facial recognition systems for mobile devices. There is significant customer demand for breakthrough technologies like these because they enable new applications and improve device performance while at the same time reducing cost. Additionally, the move to longer wavelengths will make it even simpler to safely deliver emerging technologies, such as LiDAR for automotive applications.
 
IQE has addressed demand for a 150mm GaAs-based long wavelength VCSEL with its IQDN-VCSEL™ technology. IQE has demonstrated that this dilute nitride-based technology delivers VCSELs with ~1 mW per emitter, each having more than several hundred hours of reliability. This has met the development requirements for multiple Tier 1 3D sensing customers. Because IQDN-VCSEL™ is based on the GaAs materials system, it offers a longer wavelength "drop in" solution for IQE's customers, enabling them to use the same equipment and processes that were developed for shorter wavelengths to achieve longer wavelengths.
 
IQE is currently engaged in customer-funded development programmes with key Tier 1 customers to refine this technology for qualification in future 3D sensing applications. Coupled with its IQGeVCSEL 150™ technology, IQE has demonstrated a path to volume manufacture of long wavelength VCSELs on 150 mm and ultimately 200 mm substrates.
"I am very pleased to announce the achievement of key power and reliability milestones for our IQDN-VCSEL™ technology. IQE has been able to rapidly develop an offering that exceeds what was previously possible, and our partner engagements are a testament to the potential for this technology for next generation 3D sensing applications. IQDN-VCSEL™ technology is a key component of a unique VCSEL portfolio that enables IQE's customers to serve a diverse range of high-volume market opportunities."
 
Dr Rodney PelzelChief Technology Officer Of IQE
 

2021 Infrared Sensing Market Trend- 3D Sensing, LiDAR, SWIR LED
Release: 01 January 2021 ([Update] 17th May 2021)
Format: PDF
Language: Traditional Chinese / English
Page: 175

 

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