Toshiba America Electronic Components (TAEC)*  announced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. Available with 800V and 900V ratings, the four N-channel devices (TK4A80E, TK5A80E, TK3A90E, TK5A90E) are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below 5.0A.

The new enhancement mode MOSFETs are based on Toshiba's π-MOS VIII (Pi-MOS-8), the company's eighth generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. This technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low R_DS(ON). 

Toshiba has introduced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. (All photos courtesy of Toshiba)

These MOSFETs represent low-current supplements to Toshiba's existing DTMOS IV line-up of 800V superjunction DTMOS IV devices. The 2.5A TK3A90E and 4.5A TK5A90E feature V_DSS ratings of 900V and have typical R_DS(ON)ratings of 3.7Ω and 2.5Ω, respectively. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer V_DSS ratings of 800V with typical R_DS(ON) ratings of 2.8Ω and 1.9Ω, respectively.

Toshiba's new high-voltage MOSFETs offer an ultra-low maximum leakage current of only 10μA (V_DS = 640V for the 800V device; V_DS = 720V for the 900V device) and a gate threshold voltage range of 2.5V to 4.0V. All of the devices are supplied in a standard TO-220SIS form factor.

Packaging and internal circuit.

Key Features

·         Low drain-source on-resistance

·         Low leakage current

·         Enhancement mode

Main Specifications

Pricing and Availability
Toshiba's new high-voltage MOSFETs are available now. Please contact your local Toshiba Sales Office for samples.