In the face of climate change, the transition to a sustainable energy supply system is crucial. Infineon is committed to meeting this challenge by investing in technologies that drive energy efficiency. Power semiconductors play a key role in enabling the switch to renewable energy and electrified applications, from electric vehicles to AI data centers, thus creating a net-zero economy.

In the dynamic world of power electronics, the pursuit of efficiency has led to a new class of power transistors known as wide-bandgap (WBG) semiconductors, based on the materials Silicon Carbide (SiC) and Galium Nitride (GaN). These transistors are revolutionizing power electronics and various applications involved in the green and digital transformation.

In Kulim, Malaysia, Infineon now significantly expands the capacity dedicated to wide-bandgap materials. On 8 August Infineon will officially open the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab.

The highly efficient 200-millimeter SiC power fab will strengthen Infineon’s role as the global leader in power semiconductors. The first phase of the fab will be focused on the production of silicon carbide power semiconductors and include gallium nitride (GaN) epitaxy. The second phase will create the world’s largest and most efficient 200-millimeter SiC power fab.

Kulim opening ceremony:
Date : August 8, 2024. Time: 10:10 a.m. – 11:30 a.m. (GMT+8) in Kulim, Malaysia.