A team of researchers at Chung-Shan Institute of Science and Technology (CSIST) have developed aluminum nitride (AlN) substrate for high power LED. The project is backed by Taiwan Ministry of Economic Affair’s Technology Innovation Center, according to Taiwanese media source Micro-Electronics on June 20, 2014.
The TMF8829 direct Time-of-Flight (dToF) sensor significantly increases resolution — from the previously common 8×8 zones to 48×32 — and it is designed to detect subtle spatial differences and distinguish closely spaced... READ
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Introducing the New J Series® 3030S 3V & 6V LEDs
Cree LED is expanding the proven J Series 3030 portfolio with four new high-performance LEDs that combine a 757-footprint with outstanding efficacy and drop-in compatibility with popula... READ
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