X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers.

Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology that enables smaller and more efficient electrical converters,announced it has raised €5.7 million (US $6.38 million) in first-round financing that will be used to produce high-speed power switching devices on 200mm wafers.