2017-05-11

X-FAB and Exagan Successfully Produce First GaN-on-Silicon Devices on 200-mm Wafers

X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers.
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2015-06-24

Exagan Raises EUR 5.7 M to Produce GaN-on-Silicon Power-switching Devices on 200mm Wafers

Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology that enables smaller and more efficient electrical converters,announced it has raised €5.7 million (US $6.38 million) in first-round financing that will be used to produce high-speed power switching devices on 200mm wafers.
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Industrial boiler manufacturer MIURA CO., LTD. (Tokyo Head Office: Minato-ku, Tokyo; President and CEO: Tsuyoshi Yoneda; hereinafter referred to as “MIURA”) began sales of mercury-free UV-LED water sterilization equipment using UV-... READ MORE

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