2016-11-04

UCSB Finds Metal Impurities in Metal Recombination Centers Affect LED Efficiency

Using cutting-edge first-principles calculations, researchers at the University of California, Santa Barbara (UCSB) have demonstrated the mechanism by which transition metal impurities - iron in particular - can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such impurities can have a detrimental impact on the efficiency of light-emitting diodes (LEDs) based on gallium nitride or indium gallium nitride.
Continue reading

Tokushima, Japan – 29 January 2025: Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, started mass production of a new deep UV LED (Part No. NCSU434D) in December 2024, with a peak w... READ MORE

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, is launching a white LED (Part No. NS2W806H-B2) designed for LCD backlighting. This product adds a new green chip in addition to the exist... READ MORE