2016-11-04

UCSB Finds Metal Impurities in Metal Recombination Centers Affect LED Efficiency

Using cutting-edge first-principles calculations, researchers at the University of California, Santa Barbara (UCSB) have demonstrated the mechanism by which transition metal impurities - iron in particular - can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such impurities can have a detrimental impact on the efficiency of light-emitting diodes (LEDs) based on gallium nitride or indium gallium nitride.
Continue reading

Signify, the world leader in lighting, announces Philips Skylight, a new ceiling lighting range designed to recreate the feeling of daylight indoors. Inspired by the natural brightness, depth and rhythm of sunlight, Philips Skylight combines a... READ MORE

The awarded program reinforces FORVIA’s position as a key player in next-generation in-cabin safety systems. The solution combines a traditional interior mirror with a seamlessly integrated camera, designed to monitor both driver behavio... READ MORE