2017-09-13

Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
Continue reading
Samsung today announced a new edition of its large-format LED display, The Wall, marking a pivotal expansion to its Chip on Board (CoB) lineup. Like earlier models of The Wall, the MPF series optimizes viewing experiences across an array of en... READ MORE

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced that it has filed a patent infringement lawsuit in the United States District Court for the Northern District of Illinois against Promier Products and Tractor Supply. The laws... READ MORE