2017-09-13

Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
Continue reading

Stanley Electric Co., Ltd. (Head Office: 2-9-13 Nakameguro, Meguro-ku, Tokyo; President and CEO: Yasuaki Kaizumi) has significantly improved the emission efficiency of its UV-C LEDs at a wavelength of 265nm—widely recognized as the most ... READ MORE

Nichia, the world's largest LED / Laser Diode manufacturer and inventor of the high-brightness blue and white LEDs, has confirmed a reduction in product waste and an increase in sales through a pilot test conducted in a retail garden cente... READ MORE