2017-09-13

Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
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Daktronics of Brookings, South Dakota, has partnered with the American Association of Professional Baseball (AAPB) as its official video display and control equipment provider to bring education and professional sports together. “This pa... READ MORE

As Nichia marks the key milestones of 70 years in business and 30 years since pioneering the white LED, its European division has organized a two-day, invite-only Innovation Gallery. Held on 10 and 11 March at Bernhard Knaus Fine Art, a presti... READ MORE