2017-09-13

Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
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What Is WICOP Technology? The Evolution of WICOP 1, 2 and 3 by Seoul Semiconductor From Package-Free Opto-Semiconductors to High-Voltage Operation and Rare-Earth-Free White Light WICOP (Wafer Integrated Chip on PCB) is a package-free opto-semi... READ MORE

ViewSonic Corp., a leading global provider of visual and edtech solutions, announced that the LDS136-152 Mobile Direct View LED Display Solution has been awarded Pro AV Best in Market Award from AV Technology, Systems Contractor News, and Soun... READ MORE