LEDinside listed out companies worldwide that have tapped into the development of Micro LED and what they have achieved so far. This up-to-date table covers the majority of the activities happening within the global Micro LED developing force. 

Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.