2023-12-22

Red InGaN micro-LEDs on freestanding substrates

Tsinghua University and Beijing National Laboratory for Condensed Matter Physics in China have reported on the use of freestanding gallium nitride substrates (FGS) for red indium gallium nitride (InGaN) micro-light-emitting diodes (LEDs) in terms of efficiency and uniformity across arrays of devices [Luming Yu et al, Appl. Phys. Lett., v123, p232106, 2023]. The researchers claim that InGaN red micro-LEDs with etching-defined mesa size <5μm have not previously been reported. Although it is difficult to achieve high efficiency using indium gallium nitrid...
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