2011-09-27

Ammono Makes Breakthroughs on n-GaN Substrates

Ammono has made a breakthrough on high transparency n-type gallium nitride substrates for the production of LEDs and photovoltaic applications. The company has developed a technology allowing the manufacture of GaN wafers with carrier concentrations between 2x1017 and 2x1020 cm-3. Currently, the standard n-type product has a carrier concentration of 1019cm-3. To meet the market demand, Ammono is introducing new products based on an innovative n-type material which has a higher transparency and a lower carrier concentration of 3x1017cm-3. The dislocation density in this ma...
Continue reading

With the rise of streaming services and endorsements from the Hollywood movie industry, an increasing number of movies, TV series, and documentary concert films are being produced using Virtual Production (VP) and Extended Reality (XR) technol... READ MORE

A tiny Chip LED from ams OSRAM offers higher brightness, making it simply ideal for integration into everyday devices such as in-ear headphones or smart rings The enhanced Chip LED from ams OSRAM delivers higher brightness—while taking u... READ MORE