2011-09-27

Ammono Makes Breakthroughs on n-GaN Substrates

Ammono has made a breakthrough on high transparency n-type gallium nitride substrates for the production of LEDs and photovoltaic applications. The company has developed a technology allowing the manufacture of GaN wafers with carrier concentrations between 2x1017 and 2x1020 cm-3. Currently, the standard n-type product has a carrier concentration of 1019cm-3. To meet the market demand, Ammono is introducing new products based on an innovative n-type material which has a higher transparency and a lower carrier concentration of 3x1017cm-3. The dislocation density in this ma...
Continue reading

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced that it has filed a patent infringement lawsuit in the United States District Court for the Northern District of Georgia against NanoLumens, Inc. The lawsuit asserts that Nano... READ MORE

WG Tech recently held an in-depth online discussion with Dr. Adi Abileah, former Chief Scientist at Planar Systems and a SID Fellow, to exchange insights on glass substrate based MiniLED technology innovation. Dr. Abileah, a globally respected... READ MORE