Ammono has made a breakthrough on high transparency n-type gallium nitride substrates for the production of LEDs and photovoltaic applications. The company has developed a technology allowing the manufacture of GaN wafers with carrier concentrations between 2x1017 and 2x1020 cm-3. Currently, the standard n-type product has a carrier concentration of 1019cm-3. To meet the market demand, Ammono is introducing new products based on an innovative n-type material which has a higher transparency and a lower carrier concentration of 3x1017cm-3. The dislocation density in this ma...