2012-05-04

NGK Insulators Ltd Develops New GaN Wafer for Double LED Luminous Efficiency

Recently, NGK Insulators Ltd has made a breakthrough on LED Luminous Efficiency with a gallium nitride (GaN) wafer. The company claims that the new GaN wafer can realize twice as high a luminous efficiency as existing LED light sources (200lm/W). According to the company, it realized a transparent and colorless wafer with a low defect density by using its own liquid phase growth method for a single-crystal growth process. Generally, existing LED devices have an internal quantum efficiency of 30-40% (with a current of 200mA). However, under the help of a resea...
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2011-12-13

Japanese NGK Shows GaN Substrates for HB-LEDs

Japanese based company NGK Insulators has released new wafer products for electronic device applications in ultra high brightness (UHB) LEDs. It has showcased at SEMICON Japan 2011 held between December 7 through 9 at Makuhari Messe in Chiba for the first time. The company targets wafer products as a major research and development theme in the electronics field. In the R&D line-up, there are bonded wafers that achieve new functions previously unavailable with a single material wafer, and GaN single crystal wafers that have low defect density and colourle...
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A tiny Chip LED from ams OSRAM offers higher brightness, making it simply ideal for integration into everyday devices such as in-ear headphones or smart rings The enhanced Chip LED from ams OSRAM delivers higher brightness—while taking u... READ MORE

Introducing the XLamp® XP-LR & XP-GR Round LES LEDs Cree LED is redefining beam performance in portable lighting with the launch of the XLamp® XP-LR and XP-GR LEDs – designed specifically for directional lighting application... READ MORE