Recently, NGK Insulators Ltd has made a breakthrough on LED Luminous Efficiency with a gallium nitride (GaN) wafer. The company claims that the new GaN wafer can realize twice as high a luminous efficiency as existing LED light sources (200lm/W). According to the company, it realized a transparent and colorless wafer with a low defect density by using its own liquid phase growth method for a single-crystal growth process. Generally, existing LED devices have an internal quantum efficiency of 30-40% (with a current of 200mA). However, under the help of a resea...

Japanese based company NGK Insulators has released new wafer products for electronic device applications in ultra high brightness (UHB) LEDs. It has showcased at SEMICON Japan 2011 held between December 7 through 9 at Makuhari Messe in Chiba for the first time. The company targets wafer products as a major research and development theme in the electronics field. In the R&D line-up, there are bonded wafers that achieve new functions previously unavailable with a single material wafer, and GaN single crystal wafers that have low defect density and colourle...