2013-04-09

Plessey Announces Its GaN on silicon to be Available

Plessey announced that samples of its GaN on silicon LED products are available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to manufacture the LEDs onits 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility.   The use of Plessey’s MAGIC GaN line using standard semiconductor manufacturing processing provides yield entitlements of g...
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2012-05-11

Bridgelux and Toshiba Achieve World Class Performance for 8″ GaN-On-Silicon LEDs

Bridgelux Inc. and Toshiba Corporation announced that Bridgelux and Toshiba have achieved the industry’s top class 8” GaN on Silicon LED chip emitting 614mW, <3.1V@350mA with 1.1mm square chip, just months after they have engaged in a joint collaborative agreement this year. Bridgelux and Toshiba will further accelerate their development efforts for LED chips, which have seen increasing demand for LCD panels and lightening systems world wide. Toshiba has also made an equity investment in Bridgelux with the intent to jointly pursue an innovative t...
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ams OSRAM, a global leader in innovative light and sensor solutions today held a roundtable forum spotlighting new opportunities with high precision illumination characterization. The event brought together experts from industry, academia, and... READ MORE

ams OSRAM introduces the new generation of the NIGHT BREAKER LED SPEED H7 and the first NIGHT BREAKER LED SPEED H4 which is another milestone in the field of LED retrofit lamps. Both road-approved¹ retrofit solutions carry the addition up... READ MORE