2012-05-31

LightFair International 2012 Report IV: Bridgelux and Toshiba to Mass-produce 8-inch GaN-on-Si LEDs

At LightFair International 2012, which commenced on May 8-11 in Las Vegas, LEDinside conducted an interview with Mr. Jason Posselt, Vice President of Marketing at Bridgelux, shedding light on the latest development of LED lighting and GaN-on-Si technology. Mass Production of 8-inch Gan-on-Si LEDs Posselt said that Bridgelux has successfully developed a 135lm/W Gan-on-Si LED. The Gan-on-Si technology helps reduce the cost of turning a large-size wafer into a LED. Also, silicon substrate’s cost is lower than that of sapphire substrate...
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Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and SANlight GmbH, Schruns, Austria, today announced a partnership under which SANlight will use Cree LED’s J Series® products in its new STIXX-Series luminaires. Developed for appl... READ MORE