2012-10-08

ON Semiconductor Joins imec’s Program for GaN-on-Si Power Devices

ON Semiconductor has joined the multi-partner, industrial research and development program at imec, to develop next-generation GaN-on-Silicon power devices. Currently, GaN-based power devices are too expensive for large volume manufacturing, as they are fabricated on small diameter wafers using non-standard production processes. Imec’s research program is focused on developing GaN-on-silicon technology on 200 mm wafers, as well as reducing the cost and improving the performance of GaN devices. Imec’s power devices on 200mm CMOS-compatible GaN-on-Sili...
Continue reading

This year's report plays a key role in aligning with the upcoming standards of the European Union and is built on a significantly broader data foundation than in previous years. For the first time, the report includes all LEDVANCE entities... READ MORE

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that Cube Direct Mountable Chip received the LightFair Innovation Awards in the LED Chips & Modules category. ... READ MORE