2013-02-19

Laytec Launches New in-situ GaN LED Monitoring System

Laytec has upgraded in-situ GaN LED monitoring system. LED manufacturers would know the emission wavelength of the final device during MOCVD growth. Today, according to the Solid State Lighting road map, the wavelength variation across a wafer should be less than 1 nm. This means a less than 1 K (10C) variation of the GaN surface temperature during InGaN MQW growth. LayTec’s Pyro 400 is widely used for enabling fab-wide GaN surface temperature uniformity in many LED manufacturers production lines. Meanwhile, more complex LED structur...
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Ennostar today announced a breakthrough in Micro LED optical communications. The company’s R&D team has increased the single-channel -3 dB modulation bandwidth of its blue Micro LED to 2.1 GHz at a current density of 2 kA/cm². The ... READ MORE

Daktronics of Brookings, South Dakota, was asked to refresh the video display and control system at the University of Texas, El Paso’s (UTEP) Sun Bowl Stadium. The display improved resolution 4.5 times the previous screen using the Daktr... READ MORE