2013-06-08

RPI’s Smart Lighting Engineering Research Center Shows Its First Monolithically Integrated LED and HEMT on GaN Chip

The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) has demonstrated the first monolithic integration of LED and high electron mobility transistor (HEMT) on the same gallium nitride (GaN) chip. It is estimated that this pioneering work could facilitate the generation of new LED technology that is low-cost, more efficient, and which enables new functions beyond illumination. In existing LED lighting systems, the external components including inductors, capacitors, silicon interconnects and wires, must be installed on or integ...
Continue reading
Recently, OMINSU Vietnam signed a strategic agreement with Seoul Semiconductor, marking a pivotal turning point in elevating the “Made in Vietnam” LED lighting brand. At the signing ceremony, Vietnam’s OMINSU and Seoul Semicond... READ MORE
From June 19 to 22, 2025, Samsung Electronics will collaborate with globally renowned artists to celebrate global diversity, artistic innovation and the power of display technology at Art Basel in Basel 2025, the world’s largest art fair he... READ MORE