The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) has demonstrated the first monolithic integration of LED and high electron mobility transistor (HEMT) on the same gallium nitride (GaN) chip. It is estimated that this pioneering work could facilitate the generation of new LED technology that is low-cost, more efficient, and which enables new functions beyond illumination. In existing LED lighting systems, the external components including inductors, capacitors, silicon interconnects and wires, must be installed on or integ...