It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic Device Letters. The researchers claim their 565nm yellow LEDs are the first multi-quantum well (MQW) devices produced on silicon. The researchers used metal-organic chemical vapor deposition (MOCVD) to grow the initial template, grown on 2-inch silicon. The template consisted of aluminium nitride (AlN) nucleation, 8 pai...