2013-08-06

Cree Licenses GaN Device Patents to Transphorm

Cree, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN power devices, including nitride materials, HEMT and Schottky diode designs and processing technology. While GaN HEMTs are already used extensively in RF markets by Cree and...
Continue reading

The prior blog titled “Nichia’s contribution to a realization of a mercury-free society” took a short break. However, there was a release about new LED-based water disinfection devices made by Miura Co., Ltd., a Japanese manu... READ MORE

Violumas aims to provide the best variety of high-performance UVA, UVB, and UVC LEDs, encapsulated with the highest quality fused silica optics. The wide selection of beam angles (30°, 60°, 90°, 120°, and 135°) allows Violu... READ MORE