Cree, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN power devices, including nitride materials, HEMT and Schottky diode designs and processing technology. While GaN HEMTs are already used extensively in RF markets by Cree and...