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Home > GaN-on-SiC-on-Si
2013-09-02

Aixtron MOCVD System Used by Japanese Gas Manufacturer to Develop GaN-on-SiC-on-Si

Aixtron SE announced gas manufacturer Air Water Inc. based in Azumino, Japan has successfully installed a fully automated AIX G5 HT Planetary Reactorin a 8x6-inch configuration for the growth of GaN epitaxial layers. Following the system installation, the company has announced the release of GaN-on-SiC on silicon substrates for this year.
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