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2013-10-29

Toshiba Launches Next Generation GaN-on-Si White LEDs

Toshiba Electronics Europe (TEE) has announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on cilicon (GaN-on-Si) process. The 1W TL1F2 LEDs offer a cost-competitive alternative to current LED packages, allowing manufacturers of general purpose and industrial LED lighting to drive down costs.
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FEATURED PRODUCTS
Violumas Boosts 275nm and 265nm Output in Next Generation UVC LEDs

Violumas, provider of high-power UV LED solutions and inventor of 3-PAD LED technology, is proud to launch the release of new 275nm and 265nm LEDs in mid-power, high-power, and high-density packages. The radiant flux of the new 275nm and 265nm... READ MORE

Cree LED Introduces CV28D LEDs with Groundbreaking FusionBeam Technology for LED Signs and Displays

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