2013-10-29

Toshiba Launches Next Generation GaN-on-Si White LEDs

Toshiba Electronics Europe (TEE) has announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on cilicon (GaN-on-Si) process. The 1W TL1F2 LEDs offer a cost-competitive alternative to current LED packages, allowing manufacturers of general purpose and industrial LED lighting to drive down costs.
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The CLEDIA project, co-financed by the Auvergne-Rhône-Alpes A group of logos with different names AI-generated content may be incorrect. Region and Bpifrance has just been completed after three years of collaborative innovation between P... READ MORE

Seoul Semiconductor has developed an innovative LED light source—SunLike—that reproduces a spectrum nearly identical to natural sunlight. The technology is gaining attention for its positive effects on eye health, including reducing ... READ MORE